INVITED SPEAKERS

Dr. Tomoya Sugahara
Dr. Tomoya SugaharaSenior Researcher, SAMCO Inc, Japan.
Dr. Sugahara received a Ph.D. degree from Tokushima University in 2002. While doing his Ph.D he spent one year abroad improving his skills at Oklahoma State University (1999) and later received a Young Scientist Award from the Japanese society of applied physics (JSAP). He has engaged in nitrides’ MOCVD growth and characterization, and GaN-HEMTs for more than 20 years. He is currently working at SAMCO Inc. as an R&D manager and his main focus is dry etching for III-V compound semiconductors.
Dr. Hongjian Li
Dr. Hongjian LiPost-doctoral Researcher, University of California, Santa Barbara, USA
Dr. Hongjian Li got his PhD degree in Institute of Semiconductor, Chinese Academy of Science in 2014. Then he moved to Center for Quantum Devices, Northwestern University as a postdoctoral and focus AlN based UV devices by MOCVD. In 2015, he joined SSLEEC, UCSB as a postdoctoral researcher under the supervised by Prof. DenBaars. His research field includes III-Nitride materials growth by MOCVD and devices fabrication, especially InGaN based solid-state lighting like LEDs and laser diodes. He has more than 30 papers published in APL, APEX, JAP, ACS Applied Materials & Interfaces, etc. Also, he is a reviewer forNanoTechnology, IEEE Photonics, Transactions on Electron Devices, Journal of Physics D: Applied Physics, AIP Advance, etc.

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