Model FEI Nova NanoSEM 450
General Descriptions:
Ultra High Resolution Field Emission Scanning Electron Microscope (UHR-FESEM) is a powerful tool for the imaging and characterization of nano-materials. It is designed specifically to meet the stringent requirements and increasing demand of nano-technology.
The system comprising the following components:
UHR-FESEM
Energy Dispersive X-Ray Spectrometer (EDS) is an indispensible tool for the elemental analysis. The detection range of the EDS is from Beryllium to Uranium. Both quantitative and qualitative elemental analysis can be obtained by the EDS.
Scanning Transmission Electron Microscopy (STEM) Detector with Bright Field and Dark Field imaging. STEM essentially provides high resolution imaging of the inner microstructure and the surface of a thin sample and offers high contrast imaging of low Z materials.
Electron Backscatter Diffraction (EBSD) is an important tool for the crystal orientation analysis. It is very useful for the research and investigation in the crystallography information. EBSD measurement of phase and orientation rely on detecting and analyzing electron backscatter patterns or also known as Kikuchi patterns generated in the SEM from the polycrystalline samples.
Technical Specifications:
The systems consist of:
Electron Gun
The accelerating voltage variable from 0.05kV to 30kV, continuously adjustable by software.The resolution of the secondary electron imaging is 1.0nm at accelerating voltage of 15kV and 1.4nm at accelerating voltage of 1kV. Electromagnetic two-stage condenser lens and low aberration objective lens (2 mode field-free & immersion mode lens). The probe current continuously adjustable by software control from 0.6pA up to at 200nA.
Scanning and Imaging System
The magnification range of the FESEM is from x30 to x1,000,000. Standard feature. In-Lens Secondary Electron Detector and Everhart-Thornley Secondary Electron Detector provided. It able to mix the signal from these two Secondary Electron Detector according to the desired mixing ratio and display it on the LCD as one single image. The system able to apply a bias to the specimen stage so as to decelerate incident electrons just before they hit the speciement for ultra low kV imaging down to 50V at high magnification.
High sensitivity Backscatter Electron (BSE) detector with the guaranteed resolution of at least 2.2nm at 15kV. The BSE detector usable even at very low accelerating voltage, typically below 0.5kV, surface detail can be revealed. A retractable Solid-State Scanning Transmission Electron Detector with the resolution of 0.8nm at 30kV included. This STEM detector able to provided imaging in both bright-field and dark-field modes.
Low vacuum mode to remove charging on non-conductive specimens.
Specimen Chamber
Able to accommodate specimen with the maximum diameter up to 200mm in diameter and high more than 40mm.
Energy Dispersive X-Ray Spectrometer (EDS)
An Energy Dispersive x-ray Dispersive spectrometer with the analytical Silicone Drift detector at the resolution of at least 129eV or better at the Mn Ka and detector area of at least 50mm2.
Scanning mode:
Qualitative & quantitative analysis
Full quantititative Analysis
X-Ray Mapping and Line-Scanning
SmartMap
Electron Backscattered Diffraction (EBSD) System
A high sensitivity EBSD detector with the indexing rate of 100Hz integrated with the EDX as a package for easy Point & Shoot Phase Identification efficiently based on chemistry and crystallography to be acquired simultaneously and combined EDX/EBSD Maping based on microchemistry and microstructure simultaneously.
The following features are available:
Basic Spectra & Mapping
Orientation and Phase Mapping
Basic Texture
Grain Size
EBSD stage Mapping
Advanced Texture
Hardness: Hard brittle materials eg. Semiconductors and ceramics
Results: Thickness: <10µm
Dimension: 3mm disc
Reference: Manual Book for Nova NanoSEM 450 User Operation Manual