E-BEAM EVAPORATOR PIC : Rahil Izzati Mohd Asri Tel : +604-653 5681 Email : rahilizatti@usm.my

DESCRIPTION

Process 1)

 Deposition materials : Metal deposition (Ni, Ti, Al, Au, Pt,..) 2) Wafer size: Piece , 2 inch, 4inch 3) Product yield : 4 wafers/run (@ 4inch) 4) Ultimate pressure : < 5.0 × 10-7 Torr 5) Thickness uniformity : Within Wafer ≤±3% Run to Run ≤±5% 6) Substrate rotation by motor 7) E-beam gun (15cc*6 pocket) 8) E-beam power supply (6KW) 1set 9) Pocket selector 10) Thickness monitor + Sensor 1ea 11) Cryo pump + Rotary pump 12) PLC + PC control + Touch screen control.

SYSTEM FEATURES

Process Chamber Module

Process chamber

  – Manual front access door type D shape SUS chamber

  – 2(two) view port with shutter

  – Easily removable cleaning cover (SUS304)

  – Vacuum baffle (SUS304)

  – Chamber purge & vent

  – Substrate shutter open/close by air cylinder

  – E-beam gun shutter open/close by air cylinder

  – In-vacuum water leak sensor 

Substrate holder

  – Substrate : Piece , 2 inch, 4inch

  – Product yield : 4 wafers /run

  – Rotation speed : 5~30 rpm

  – Substrate rotation by AC motor

  – Glow discharge compatible

  Substrate heater

 – Adjustable temperature control

 – Halogen lamp max. temp.: 400℃

 – K type thermocouple

E-beam Module

E-beam power supply

  – High voltage output: 6KW @ 8kV max

  – Voltage adjustable from 6kV to 8Kv

  – Beam current adjustable 0~750mA

  – Tetrode tube for superior instantaneous arc down recovery

  – Constant emission current regulation 

Thickness Controller Module

Thickness monitor

 – Frequency Resolution : 0.03 [Hz]

 – Measurement interval : 0.1 sec

 – Crystal starting frequency : 5 or 6 MHz

 – Number of processes : 99

 – Number of layers : 999

Oscillator package

Thickness sensor

 – Standard sensor head type

 – Water feedthrough

Vacuum Module

Vacuum pump

– Cryo pump -. Pumping speed: 4,000 ℓ/sec

 – Rotary pump

 -. Pumping speed: 670ℓ/min(@60Hz), 550ℓ/min(@50Hz)

 -. Inlet connection: NW25 -. Outlet connection: NW25

 – Ultimate pressure : 5×10-7 Torr l Pressure gauge

 – Full range vacuum gauge : 760 torr ~ 5 x 10-9 torr

 – Pressure readout & cable kit l Vacuum valves & lines

 – Main valve : Pneumatic type gate valve – Fore line valve : Pneumatic type angle valve

 – Roughing line valve : Pneumatic type angle valve

 – Auto vent line

 – Stainless steel hard line and flexible bellows line

Gas Delivery Module

Used gases & flow control

 – Purge & vent : N2 : Metering valve

 Gas valves & gas line

 – Pneumatically operated diaphragm valve

 – Metering valve for N2 purge & vent

 – The gas line is helium-leak tested to 10-8 Torr·L/sec

 Control Module

System control

 – System is controlled by PC

 – Industrial PC (PENTIUM, 17” LCD monitor)

 – Including analog & digital input/output card

 – Process control software

 – User friendly screen & easy Graphic User Interface (GUI)

 – Process data logging

 – Recipe edit, save, download, run l 19” standard rack with electrical contact mechanism

 – Electrical power drive panel (ON/OFF/Emergency switch)

 – Beam sweep controller panel

 – E-Beam power controller panel

 – Crucible index controller panel

 – Thickness monitor panel

 – Vacuum gauge controller panel

 – Shutter open/close operation panel

 – Schematic panel

 Provide thickness uniformity simulation data (by using UEASE tool)

Frame Module

System frame is mild steel

 – White & Blue colored panels & frame covers

 – 19inch control panel mountable

 – Easily movable casters & leveling foots

 APLICATION USE

Electron beam applications. We use electrons as a versatile tool. ... Thermal electron beam processes, based on the local heating of metals from energy input via electrons, can be used for welding, curing, microstructuring and joining processes, and for evaporating materials.

GLOVE BOX PIC : Syed Mohamad Syed Sahil Tel : +604-653 5641 Email : syed.mohamad@usm.my

GENERAL DESCRIPTION

Glove box for samples handling in isolated and controlled environment to prevent oxidation,moisture, and dust from the sample.

SYSTEM FEATURES

1-A fully sealed transparent (see through) acrylic chamber.The thickness of the acrylic shall be at least   5mm or better.

2-The chamber containment size shall be at least (900x500x500)mm (LXWXH) or better.

3-Features vacuum intake fpr the gases supply and exhaust port to the vacuum pump.

4-At least one pair of latex gloves included.

APPLICATION USE

A glovebox (or glove box) is a sealed container that is designed to allow one to manipulate objects where a separate atmosphere is desired. Built into the sides of the glovebox are gloves arranged in such a way that the user can place their hands into the gloves and perform tasks inside the box without breaking containment. Part or all of the box is usually transparent to allow the user to see what is being manipulated. Two types of gloveboxes exist. The first allows a person to work with hazardous substances, such as radioactive materials or infectious disease agents, and the second allows manipulation of substances that must be contained within a very high purity inert atmosphere, such as argon or nitrogen. It is also possible to use a glovebox for manipulation of items in a vacuum chamber.

HIGH TEMPERATURE FURNACE PIC : Azraai Fahmi Hamzah Tel : +604-653 5646 Email : azraai@usm.my

GENERAL DESCRIPTION

OTF-1500X is a split three-zone tube furnace with mullite tube and conventional flange working up to 1500°C. Temperature controllers are installed with +/ - 5°C accuracy. It is an excellent furnace for exchanging processing tube for multi-purpose.  

SYSTEM FEATURES

• Tube furnace with 3 zone heating zone. It includes inlet/outlet seal/flange, working tube, temperature controller and mass flow controller.
• Total length of 3 heating zone shall be at least 500mm or more
• Max temperature 1500˚C
• Constant temperature: 1450˚C
• Working tube :

1. Tube size 75mm (ID) X 1300mm (length)
2. Tube material able withstand temperature up to 1500˚C
3. Tube material made of quartz for 1200˚C and alumina tube up to 1800˚C

• Temperature controller:

1. Better with programmable controller to set heating rate and dwell time
2. Able to ramp followed by dwell using the temperature controller for more than 20 segment
3. Temperature controller protected from over temperature control safety feature
4. Temperature controller shall have an over temperature alarm for unattended operation.
5. Temperature controller comes with RS485 to connect direct to a data logger or a computer

• Mass flow controller

1. Max flow rate 6 bar (0-5L/min)
2. Mass flow controller supply compatible for the gas flow of nitrogen/hydrogen/oxygen/air/argon.

• Vacuum pump

1. Upgrade is possible for high temperature horizontal tube furnace for vacuum annealing at certain level.

APPLICATION USED

High temperature furnace used for the heat treatment of powder, thin film coated, and bulk samples.

INDUCTIVE COUPLE PLASMA ETCHING SYSTEM(ICP) PIC : Mohd Anas Ahmad Tel : +604-653 5652 Email : anas@usm.my

DESCRIPTION

Process

1) Etching material : III-V compound semiconductors

2) Substrate size : Piece, 2 inch, 4 inch

 3) Product yield : 1 wafer/run

Substrate size & load capacity : Piece, 2 inch, 4inch wafer Source (gas) injection type : Showerhead type Chuck cooling by chiller Mechanical wafer clamp Substrate back side He cooling RF generator 600W 1ea(13.56MHz) for bias RF generator 1,000W 1ea(13.56MHz) for ICP source Rotary pump (fomblin type) + TMP for process chamber Rotary pump for loadlock chamber Baratron Gauge for processing pressure : Full scale 0.1 Torr Process pressure control by pendulum valve PC control

SYSTEM FEATURES

Process Chamber Module

 Process chamber

 – Chamber material : Anodized aluminum

 – View port with shutter

– Wall temperature control

 – Chamber purge & vent

 Showerhead unit

– Process gas injection through showerhead

– Showerhead material : Aluminum

  ICP source

 – Uniform plasma density suitable for 4inch wafer processing

– ICP cavity wall : Al2O3

– Top plate with a port for plasma diagnostics

 – Top plate temperature control

 Chuck unit

 – Substrate size : Piece, 2inch, 4inch

– Chuck cooling by Chiller

 – Substrate back side He cooling

 – System shielded perfectly from RF noise

 – Mechanical wafer chucking with clamp

Power Supply Module

RF generator (1ea)

 – for bias

 – Output power : 600W

– Frequency : 13.56MHz

 – DC self bias display

 RF matching network (1ea)

– Automatic matching type

– Frequency : 13.56MHz l RF generator (1ea)

– for ICP source

 – Output power : 1,000W

– Frequency : 13.56MHz

 RF matching network (1ea)

– Automatic matching type

 – Frequency : 13.56MHz

  RF cable kit (2set)

Vacuum pump

– TMP : 1,400 L/sec, Magnetic type

– Rotary pump : 740L/min

 – Ultimate pressure : < 5×10-6 Torr

  Pressure gauge

– Full range vacuum gauge : 760 torr ~ 5 x 10-9 torr

 – Pressure readout & cable kit l Pressure control

– APC (Automatic Pressure Controller)

– Pendulum valve

– Baratron gauge : Full scale 0.1Torr

 Vacuum valves & lines

 – Fore line valve : Pneumatic type angle valve

 – Roughing line valve : Pneumatic type angle valve

– Stainless steel hard line and flexible bellows line

APLICATION USE

Inductively Coupled Plasma Etching (ICP) ICP etching is a widely used technique to deliver high etch rates, high selectivity and low damage processing. Excellent profile control is also provided as the plasma can be maintained at low pressures.

RAPID THERMAL PROCESSOR SYSTEM (RTP) PIC : Nur Atiqah Hamzah Tel : +604-653 5681 Email : atiqahhamzah@usm.my

DESCRIPTION

Rapid thermal processing is a semiconductor manufacturing process which heats silicon wafers to high temperatures on a timescale of several seconds or less. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. 

SYSTEM FEATURES

Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to high temperatures (over 1,000 °C) on a timescale of several seconds or less. During cooling, however, wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps or lasers. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.

 TEMPERATURE CONTROL

One of the key challenges in rapid thermal processing is accurate measurement and control of the wafer temperature. Monitoring the ambient with a thermocouple has only recently become feasible, in that the high temperature ramp rates prevent the wafer from coming to thermal equilibrium with the process chamber. One temperature control strategy involves in situ pyrometry to effect real time control. Used for melting iron for welding purposes.

RAPID THERMAL ANNEAL

Rapid thermal anneal (RTA) is a subset of Rapid Thermal Processing. It is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. Unique heat treatments are designed for different effects. Wafers can be heated in order to activate dopants, change film-to-film or film-to-wafer substrate interfaces, densify deposited films, change states of grown films, repair damage from ion implantation, move dopants or drive dopants from one film into another or from a film into the wafer substrate.

Rapid thermal anneals are performed by equipment that heats a single wafer at a time using either lamp based heating, a hot chuck, or a hot plate that a wafer is brought near. Unlike furnace anneals they are short in duration, processing each wafer in several minutes.

To achieve short annealing times and quick throughput, sacrifices are made in temperature and process uniformity, temperature measurement and control, and wafer stress.

Recently, RTP-like processing has found applications in another rapidly growing field—solar cell fabrication. RTP-like processing, in which an increase in the temperature of the semiconductor sample is produced by the absorption of the optical flux, is now used for a host of solar cell fabrication steps, including phosphorus diffusion for N/P junction formation and impurity gettering, hydrogen diffusion for impurity and defect passivation, and formation of screen-printed contacts using Ag-ink for the front and Al-ink for back contacts, respectively.

APPLICATION USE

It is a process used in semiconductor device fabrication which consists of heating a single wafer at a time in order to affect its electrical properties. ... Unlike furnace anneals they are short in duration, processing each wafer in several minutes.

SINGLE ZONE TUBE FURNACE PIC : Aminah Shuhada Alias Tel : +604-653 5647 Email : aminahshuhada@usm.my

GENERAL DESCRIPTION

OTF-1200X-80-F3LV is a  spiltable single zone tube furnace with 80mm diameter quartz tube, mechanical vacuum pump and three channel gas flowing system. It can achieve a maximum vacuum up to 10^-2 torr and mix 1-3  types of gases for CVD or diffusion. This furnace system also includes an anti-corrosive Pirani Capacitance Diaphragm Gauge to enable vacuum measurements with aggressive gases.

SYSTEM FEATURES

1-Comply with better specification ,naberthem single zone tube furnace R/50/12/B410

2-Comply and better the total heated length is 500mm or more.

3-Comply and better maximum operating temperatures is 1200 celcius

4-Comply and better continuous operating temperatures is 1200 celcius.

APPLICATION USE

Typical applications of tube furnaces include the purification, coating, drying, hardening or ageing of samples. Among other uses, a tube furnace can also be used for annealing, brazing, calcination, degassing, sintering, soldering, sublimation, synthesis, and tempering. In a laboratory a tube furnace could be used for thermocouple calibration, in the testing of fuel cells, or in catalyst research.
The intended use of your tube furnace will govern which furnace is most suitable for you. Our tube furnace selection ranges from simple and economical options such as the wire wound single zone tube furnace through to more advanced systems such as the AZ tube furnace, which has eight independently controllable heating zones. The controllable heating zones of the AZ tube furnace allows a temperature gradient to be set for applications such as chemical vapour deposition.

UV-OZONE CLEANER PIC : Syed Mohamad Syed Sahil Tel : +604-653 5641 Email : syed.mohamad@usm.my

GENERAL DESCRIPTION

UV Ozone Cleaning System provides a simple, inexpensive, and efficient method of obtaining ultra-clean surfaces free of organic contaminants. The UV Ozone Cleaning System can clean a wide range of substrates, such as quartz, silicon, gold, nickel, aluminium, gallium arsenide, alumina, and glass slides. The cleaning procedure is based on a photo-sensitized oxidation process, where the contaminant organic molecules are excited and/or dissociated by the absorption of short wavelength UV radiation.

SYSTEM FEATURES

UV Lamp : Synthetic quartz 4 x 4 grid UV lamp

UV lamp key wavelengths : 185 nm and 254 nm

Power supply : 230V ± 10 %; 50/60Hz, 50 VA

Class of protection : Class I

Degree of protection : IP20

Maximum run time : 59 minutes and 59 seconds

Safety features : Interlock; thermal cut-out

Unit dimensions : Width: 193 mm

                             Height: 230 mm

Depth: 300 mm

Tray dimensions : 100 mm x 100 mm

Fuses : 1 A slow blow

Weight : 5 kg

APPLICATION USED

• Improving surface hydrophilicity
• Surface cleaning
• Preparation for thin-film deposition and surface treatment
• Ultraviolet curing
• Surface sterilization
• Removal of surface monolayers
• Surface oxidation

WEIGHING BALANCE PIC : Rahil Izzati Mohd Asri Tel : +604-653 5681 Email : rahilizzati@usm.my

Features

 High-speed weighing with 2-second stabilization
 Removable, shatterproof breeze break with antistatic coating
 Compact foot print: 198 mm × 294 mm (smaller than an A4 sheet of paper)
 Rotary sliding doors requiring no extra space at the rear 
 Adjustable response characteristics to help cope with the effect of drafts and vibrations 
 Multiple weighing units: g, mg, oz, ozt, ct, mom, dwt, grain, specific gravity, and a user-programmable unit for conversion applications (either tael, tola or Newton can be added upon request)
 Easily visible, front-mounted spirit level for adjusting the leveling feet
 Automatic calibration with an internal mass (HR-AZ) 
 Clear, reverse-backlit LCD 
 GLP/GMP/GCP/ISO compliant output 
 Clock and calendar function (HR-AZ)
 Counting mode with the Automatic Counting Accuracy Improvement (ACAI) function 
 Percent mode function 
 Animal weighing (hold) function 
 Statistical calculation function 
 Comparator function with buzzer 
 Auto power on/off function 
 Underhook function 
 Density determination function and an optional density determination kit 
 Built-in rechargeable battery (optional)

Specifications & Description

Capacity (g)252
Readability (g)0.0001
Linearity (g)0.0003
Weighing Unitsg, mg, oz, oz-t, ct, mom, dwt, gr, tael, tola, pcs, %, DS, custom
Calibration TypeInternal
OutputRS-232 / USB
Stability IndicatorYes
Stabilization Time (Sec)2
Power (VAC)115 / 230
Height (in)12 1/2
Width (in)7 3/4
Depth (in)11 1/2
Draft Shield Height (in)4 13/32
DescriptionGalaxy Analytical Balance, 252g x 0.1mg with Internal Calibration