• Mon - Fri 8:10 - 17:10

OUR PRODUCTS YOU CAN PURCHASE

Gallium Nitride (GaN) Epitaxial Grown on Sapphire Wafers

GaN, otherwise known as gallium nitride, is used for the production of semiconductor power devices such as diodes and transistors as well as RF components and laser diodes (LEDs). In the past, silicon was used as a power semiconductor, but the advancement of GaN has made it a priority. GaN is capable of taking over where Si leaves power conversion, RF and analog applications. The reason for this change is that this technology requires a wide-bandgap material such as GaN. It has very high electrical resistance and excellent performance at high temperatures. If you are looking for a reliable and high quality product, we suggest that you use our fine substrates.

ud-GaN
RM3,100.00
per growth (3 pcs)
Standard Epi-Wafer Characteristics
  • Dimension: 2" x 3 pcs
  • Standard Thickness (nm): 3200
  • AFM RMS (nm): <1
  • (002) FWHM (arcsec): <300
  • (102) FWHM (arcsec): <350
  • **Bulk Resistivity (Ohm.cm): none
  • **Bulk Carrier Density (cm2): none
  • **Hall Mobility (cm2 /V.s): none
  • Useable Surface Area: 2"
n-GaN/ud-GaN
RM4,000.00
per growth (3 pcs)
Standard Epi-Wafer Characteristics
  • Dimension: 2" x 3 pcs
  • Standard Thickness (nm): 2400 on ud-GaN
  • AFM RMS (nm): <1
  • (002) FWHM (arcsec): <300
  • (102) FWHM (arcsec): <350
  • **Bulk Resistivity (Ohm.cm): 0.00425
  • **Bulk Carrier Density (cm2): >1E+18
  • **Hall Mobility (cm2 /V.s): 176
  • Useable Surface Area: 2"
p-GaN/ud-GaN
RM4,000.00
per growth (3 pcs)
Standard Epi-Wafer Characteristics
  • Dimension: 2" x 3 pcs
  • Standard Thickness (nm): 250 on ud-GaN
  • AFM RMS (nm): <1
  • (002) FWHM (arcsec): <300
  • (102) FWHM (arcsec): <350
  • **Bulk Resistivity (Ohm.cm): 0.0281
  • **Bulk Carrier Density (cm2): >1E+18
  • **Hall Mobility (cm2 /V.s): 10.9
  • Useable Surface Area: 2"
ud-GaN
RM1,100.00
per pieces (1 pcs)
Standard Epi-Wafer Characteristics
  • Dimension: 2" x 1 pcs
  • Standard Thickness (nm): 3200
  • AFM RMS (nm): <1
  • (002) FWHM (arcsec): <300
  • (102) FWHM (arcsec): <350
  • **Bulk Resistivity (Ohm.cm): none
  • **Bulk Carrier Density (cm2): none
  • **Hall Mobility (cm2 /V.s): none
  • Useable Surface Area: 2"
n-GaN/ud-GaN
RM1,400.00
per pieces (1 pcs)
Standard Epi-Wafer Characteristics
  • Dimension: 2" x 1 pcs
  • Standard Thickness (nm): 2400 on ud-GaN
  • AFM RMS (nm): <1
  • (002) FWHM (arcsec): <300
  • (102) FWHM (arcsec): <350
  • **Bulk Resistivity (Ohm.cm): 0.00425
  • **Bulk Carrier Density (cm2): >1E+18
  • **Hall Mobility (cm2 /V.s): 176
  • Useable Surface Area: 2"
p-GaN/ud-GaN
RM1,400.00
per pieces (1 pcs)
Standard Epi-Wafer Characteristics
  • Dimension: 2" x 1 pcs
  • Standard Thickness (nm): 250 on ud-GaN
  • AFM RMS (nm): <1
  • (002) FWHM (arcsec): <300
  • (102) FWHM (arcsec): <350
  • **Bulk Resistivity (Ohm.cm): 0.0281
  • **Bulk Carrier Density (cm2): >1E+18
  • **Hall Mobility (cm2 /V.s): 10.9
  • Useable Surface Area: 2"
Image

ORDER FORM

EPI on PSS and FSS
Choose your preferred products

TOTAL PRICE: RM 

Institute of Nano Optoelectronics Research and
Technology (INOR), Universiti Sains Malaysia,
11800 USM, Penang, Malaysia.
T:+604-653 5637/5638
F:+604-653 5639

© 2017 INOR. All Rights Reserved. Designed By INOR.