Dr. Quah Hock Jin

Senior Lecturer

Institute of Nano Optoelectronics Research and Technology (INOR)

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Name: Quah Hock Jin

Designation: Dr.

Present Position:  Senior Lecturer

Email: hock_jin@usm.my

Area of Specialization:

Electronic Materials, Wide Band Gap Semiconductors, High Dielectric Constant Binary and Ternary Gate Oxide, Si-, SiC- and GaN-based Metal-Oxide-Semiconductor (MOS) Devices

Correspondence Address:

Institute of Nano Optoelectronics Research and Technology (INOR),
Universiti Sains Malaysia (USM),
11800 Penang, MALAYSIA

Office address:

SAINS@USM,
Ground Floor, Blok A, No 10, Persiaran Bukit Jambul,
11900 Bayan Lepas, Penang, Malaysia

Tel:+604 653 5682
Fax:+604 653 5639

ResearcherID: G-3994-2013

Scopus Author ID: 24779772700

Biography

Dr. Quah Hock Jin is currently working as senior lecturer at Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia (USM). Previously, he was a MOCVD engineer in Collaborative Research in Engineering, Science, & Technology (CREST), with the responsibility of controlling CREST MOCVD system that is located at INOR, USM for the national project related to “GaN on GaN”. He received his BEng (Hons) in Materials Engineering from School of Materials and Mineral Engineering (SMMRE), Universiti Sains Malaysia (USM) in 2008. He graduated with PhD (2014) and MSc (2010) in Electronics Materials from SMMRE, USM under the sponsorship of “The USM Vice Chancellor’s Award 2011” and “USM Fellowship”, respectively. He was previously a post-doctoral fellow in Institute of Nano Optoelectronics Research and Technology (INOR), USM and Institute of Advanced Technology (ITMA), Universiti Putra Malaysia. His research interest encompasses development of thin film technology and optimization of device performance based on high dielectric constant thin film materials as well as wide band gap semiconductors for potential applications in power electronics, solid-state lighting, and gas sensors. For years, he has actively involved in the growth of binary and ternary based thin film materials as passivation layers for GaN-, SiC-, Si-, and Ge-based metal-oxide-semiconductor (MOS) capacitors. In recent times, his research areas are widened to the growth and modification of GaN-based compound semiconductors using low cost route to study the aspects of optical performance and gas sensing behaviours point of view. His contribution in the field of research and development is reflected through 46 refereed international top-tier publications with H-Index of 15 and 2 patents filed under MyIPO. He has also received several recognitions from the university under “Sanggar Sanjung” awards for year 2008, 2010, 2011, 2012, 2013, 2014, 2015, and 2016 as well as the “Best Thesis Award for Category of CRI: Engineering and Technology” for the year 2014. He is presently an editorial board member of “The Open Electrical & Electronic Engineering Journal (Bentham Open)” as well as “Journal of Material Science and Technology Research (Zeal Press)” and also review editor for “Colloidal Materials and Interfaces (Frontiers in Materials; Impact Factor: 2.689).

Education

Academic Qualification

Universiti Sains Malaysia, Malaysia

Doctor of Philosophy
(Electronic Materials)

Universiti Sains Malaysia, Malaysia

Master of Science
(Materials Engineering)

Universiti Sains Malaysia, Malaysia

Bachelor of Engineering (Honours)
(Materials Engineering)

Professional Membership

Editorial Board Member – Journal of Material Science and Technology Research (International)

(since 2019)

Editorial Board Member – The Open Electrical & Electronic Engineering Journal (International)

(since 2017)

Colloidal Materials and Interfaces (Frontiers in Materials), (International)

(since 2016)

Golden Key International Honour Society (International)

(since 2005)

Board of Engineers (BEM), (National)

(since 2010)

Institute of Nano Optoelectronics Research and
Technology (INOR), Universiti Sains Malaysia,
11800 USM, Penang, Malaysia.
T:+604-653 5637/5638
F:+604-653 5639

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