Current Research Projects
| Principle Investigator | Research Project Title | |
| Professor Dr. Zainuriah Hassan | 1. | Growth/deposition and characterization of wide band gap semiconductor materials, in particular III-Nitrides (GaN and related alloys), ZnO, CdS, TiO2, and other metal oxides. |
| 2. | Fabrication, characterization, and simulation/design of optoelectronic and electronic devices such as LEDs and sensors based on III-nitrides and other semiconductor materials. | |
| 3. | Nanostructures and hybrid heterostructures for device applications. | |
| Principle Investigator | Research Project Title | |
| Assoc. Prof. Dr. Ng Sha Shiong | 1. | MOCVD growth of III-nitride semiconductor materials for light emitting and solar cell applications. |
| 2. | Low-cost growth of semiconductor materials in particular, III-Nitrides, metal oxides and molybdenum disulfide. | |
| 3. | Theoretical modelling of polarized infrared reflectance and surface phonon polariton of wide band gap semiconductors. | |
| Principle Investigator | Research Project Title | |
| Assoc. Prof. Dr. Norzaini Zainal | 1. | Nitrides based LEDs epitaxy for longer and shorter wavelength emission. |
| 2. | Fabrication and processing III-V Nitrides materials and devices. | |
| 3. | Nitrides based HEMT epitaxy. | |
| Principle Investigator | Research Project Title | |
| Dr. Lim Way Foong | 1. | Rare earth/ transition metal oxide and its application for Si, 4H-SiC, and GaN-based MOS devices. |
| 2. | Hybrid inorganic-organic structures for optoelectronics and electronics. | |
| 3. | Surface alteration of narrow and wide band gap semiconductors. | |
| Principle Investigator | Research Project Title | |
| Dr. Sabah M. Mohammad | 1. | Preparation and characterization of 1D, 2D and 3D semiconductor materials and metal nanoparticles such as GaN, ZnO, and other metal oxides. |
| 2. | Fabrication and characterization of optoelectronic and electronic devices such as LEDs, Solar cells, Photodetectors, gas sensors and other sensors based on nanostructures wide band gap semiconductor materials. | |
| 3. | Fabrication of porous semiconductors materials for application in optoelectronic and electronic devices. | |
| Principle Investigator | Research Project Title | |
| Dr. Mohd Syamsul Nasyriq Samsol Baharin | 1. | Power electronics of wide bandgap materials (GaN and Diamond). |
| 2. | THz applications of 2D materials ie graphene and hexagonal boron nitride (h-BN). | |
| 3. | Novel sensors of graphene and diamond materials. | |
| Principle Investigator | Research Project Title | |
| Dr. Quah Hock Jin | 1. | Binary and ternary based high dielectric constant materials as passivation layer for Si-, SiC-, and GaN-based MOS devices. |
| 2. | Rare earth doped gallium oxide as channel layer for thin film transistors. | |
| 3. | Perovskite materials for potential applications. | |
| Principle Investigator | Research Project Title | |
| Dr. Mundzir Abdullah | 1. | Experimental and computational study of 3rd order optical susceptibility of 2D materials (i.e. graphene, metal dichalcogenide). |
| 2. | Study on the correction of local field effect of nanocomposites/porous materials under intense laser irradiation. | |
| 3. | Assessment of new optical limiters materials based on carbon allotropes and perovskites. | |
| Principle Investigator | Research Project Title | |
| Dr. Faezah Jasman | 1. | Underwater Optical Wireless Communications. |
| 2. | Visible Light Communications - LiFi. | |
| 3. | Optoelectronic Devices. | |