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FABRICATION LABORATORY

ELECTRON BEAM (E-BEAM) EVAPORATOR FOR METALS

The ULTECH SEE-5S e-beam (metals) system is a cryo-pump thin films evaporator with a 6 kW power supply, 6 pockets of e-beam sources. The e-beam system has 270° beam deflection and a new magnetic field design. This provides a much straighter beam path through the melt material, thus can increase the usable portion of the melt inventory and produces a more uniform and predictable evaporant cloud. The SEE-5S (Metal) is used for evaporating high purity metals, such as Al, Au, Ni, Cr, Pt, Ti, Pt, etc. The system has a planetary substrate holder which suitable for any sample size up to 4-inch diameter. The system has 6 pockets for e-beam sources and also has a Telemark Model 861 controller that allows for fully automated programming of multiple layers deposition.

ELECTRON BEAM (E-BEAM) EVAPORATOR FOR OXIDES

The ULTECH SEE-5S e-beam (oxides) system is a cryo-pump thin films evaporator with a 6 kW power supply, 6 pockets of e-beam sources. The e-beam system has 270° beam deflection and a new magnetic field design. This provides a much straighter beam path through the melt material, thus can increase the usable portion of the melt inventory and produces a more uniform and predictable evaporant cloud. This e-beam evaporation system is used to deposit single or multi layers of various oxides such as dielectrics, transparent conductive oxides (TCOs), etc. It is widely used to deposit SiO, TiO, ZnO, and ITO. During the deposition, oxygen gas can be flowed into the system to maintain the stoichiometry of the deposition layers. The system has a planetary substrate holder which suitable for any sample size up to 4-inch diameter. The system has 6 pockets for e-beam sources and also has a Telemark Model 861 controller that allows for fully automated programming of multiple layers deposition

INDUCTIVE COUPLE PLASMA AND REACTIVE ION ETCHING (ICP-RIE) SYSTEM

ICP-RIE is a widely used technique for high etch rates, high selectivity, and low etching damage processes. The system is equipped with an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and RT operation with back-side helium cooling. The system has cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This system is configured with a wide range of gases, i.e., Cl2, BCl3, CF4, CH4, Ar, N2, H2 and O2. Hence, it can be used to etch a variety of materials, i.e., metal oxides, metals, and semiconductor compounds.

RAPID THERMAL PROCESSOR SYSTEM (RTP)

The UTR-100 is a manual loading RTP system manufactured by Ultech Korea. The UTR-100 can process up to 4-inch wafer substrate. The system can hold one 4-inch wafer or smaller substrates placed on top of a silicon carrier wafer. The recipe software is able to be edited, save, download and run automatically.

HIGH TEMPERATURE FURNACE

MTI Corporation high temperature furnace, Model OTF-1500X is a split three-zone tube furnace with mullite tube and conventional flange which can work up to 1500°C. The temperature controllers have an accuracy of +/- 5°C accuracy. It is an excellent furnace for multi-purpose heat treatment experiments.

SINGLE ZONE TUBE FURNACE

MTI Corporation single zone tube furnace, model GSL-1100X-S is a high temperature vacuum tube furnace with a compact designed for heating samples up to 1100°C. The system comes with stainless steel vacuum flanges with valves, vacuum pressure gauge, and quartz tube. Besides that, the built-in precision temperature controller can program up to 30 segments of heating, dwelling, and cooling steps. The furnace can be set up in both vertical and horizontal positions to meet various applications such as sample heating, VLS, CVD, and quenching tests.

DIP COATER

EQ-PTL-OV5P programmable dip coater is designed for fabricating samples by coating multi-layers with maximum 5 different kinds of solutions (coating materials). The whole process is conducted under an enclosed heating chamber. The chamber is with controllable temperature.

UV-OZONE CLEANER

Ossila UV Ozone Cleaner has proven to be a simple, an inexpensive and efficient tool for non-acidic, dry, non-destructive atomic cleaning and removal of organic contaminants using intense 185 nm and 254 nm ultraviolet light. The presence of ozone and UV light allows the removal of organics and sterilizes the surface. The UV Ozone Cleaner System can clean a wide range of substrates, such as quartz, silicon, gold, nickel, aluminium, gallium arsenide, alumina, and glass slides, etc. The cleaning procedure is based on a photo-sensitized oxidation process, where the contaminant organic molecules are excited and/or dissociated by the absorption of short wavelength UV radiation.

GLOVE BOX

Custom made universal glove box for samples handling in isolated and controlled environment to prevent oxidation, moisture and dust from the sample. This glove box can be used with or without vacuum.

PROFILOMETER

The DektakPro stylus profilometer manufactured by Bruker is a high-precision surface metrology instrument used to measure step height, thin-film thickness, surface roughness, and profile geometry across a wide range of materials. The system operates using a stylus-based contact measurement technique, in which a diamond-tipped probe traverses the sample surface under controlled force to detect vertical height variations with high resolution. It is suitable for the characterization of deposited films, etched features, patterned substrates, and microfabricated structures. The system enables quantitative analysis of surface topography and is widely applied in semiconductor processing, thin-film research, microelectronics, and advanced materials characterization.

DC/RF SPUTTERING SYSTEM

This equipment is a high-vacuum magnetron sputtering system designed for the deposition of advanced III-nitride thin films, including AlN, GaN, and InN, commonly used in semiconductor and optoelectronic applications. The system operates at a base pressure of 1 × 10⁻⁷ Torr, ensuring a clean and low-contamination environment for high-quality film growth. It is equipped with three magnetron sources powered by both RF and DC supplies, allowing flexibility in depositing different materials and enabling controlled incorporation of dopants such as silicon (Si) and magnesium (Mg). A silicon carbide (SiC) heater provides substrate heating up to 700 °C to enhance film crystallinity and adhesion. The sample holder includes a rotation mechanism to ensure uniform film thickness and composition across the substrate surface. A dedicated load-lock chamber is integrated to reduce exposure to ambient air, maintaining low impurity levels during sample transfer. The system also features automated pump-down and programmable recipe control, supporting both single-layer and multi-layer deposition processes with high repeatability. Argon (Ar) and nitrogen (N₂) gas supplies are used as sputtering and reactive gases. In addition, an in-situ thickness monitoring system is integrated to provide real-time feedback and precise control of film thickness during deposition.