MOCVD LABORATORY
METAL ORGANIC CHEMICAL VAPOUR DEPOSITION (MOCVD) SYSTEM
The Taiyo Nippon Sanso Corporation (TNSC) MOCVD model SR4338KS‐R(HT) is a high performance MOCVD equipment used for epitaxial growth of GaN-based materials (GaN, AlGaN & InGaN). The reactor is designed based on horizontal laminar flow reactor equipped with a glovebox and a high vacuum pass-box. This system can produce high quality and high uniformity of III-V nitride semiconductor epitaxial layers on 2” and 4” substrates suitable for various device applications. INOR has established the baseline recipes for the related high quality III-V epitaxial growth. various device applications. INOR has established the baseline recipes for the related high quality III-V epitaxial growth,