Institute of Nano Optoelectronics Research and Technology (INOR) focuses on research and development (R&D) from the areas of nanoscience, nanomaterials, nanofabrication and nanoengineering that are collectively building intellectual and technological bridges from nanoscale concepts to practical nano optoelectronic devices and systems. 

Our focused niche includes III-Nitrides epitaxy for optoelectronics and advanced devices, encompassing III-Nitrides for advanced LEDs, solar cells, nanophotonic devices, power electronic devices, and ultraviolet detectors.

Through the current HICoE program, the effort is continued by focusing on improvements of the material quality of the layers with different material compositions and different device design structures. In particular, this program is divided into five projects: aluminum gallium nitride (AlGaN) UV LEDs, long-wavelength emission Indium gallium nitride/gallium nitride (InGaN/GaN) LEDs, InGaN solar cells, GaN-based nanophotonics devices, AlGaN/GaN high-electron-mobility transistors (HEMTs), and GaN UV detectors.