INDUCTIVE COUPLE PLASMA AND REACTIVE ION ETCHING (ICP-RIE) SYSTEM
ICP-RIE is a widely used technique for high etch rates, high selectivity, and low etching damage processes. The system is equipped with an ICP etching tool with 1000 W ICP power, 600 W RF substrate power, and RT operation with back-side helium cooling. The system has cooling and an electrostatic chuck to maintain controlled surface temperatures during etching. This system is configured with a wide range of gases, i.e., Cl2, BCl3, CF4, CH4, Ar, N2, H2 and O2. Hence, it can be used to etch a variety of materials, i.e., metal oxides, metals, and semiconductor compounds.