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EQUIPMENT

ELECTRON BEAM (E-BEAM) EVAPORATOR FOR METALS

The ULTECH SEE-5S e-beam (metals) system is a cryo-pump thin films evaporator with a 6 kW power supply, 6 pockets of e-beam sources. The e-beam system has 270° beam deflection and a new magnetic field design. This provides a much straighter beam path through the melt material, thus can increase the usable portion of the melt inventory and produces a more uniform and predictable evaporant cloud. The SEE-5S (Metal) is used for evaporating high purity metals, such as Al, Au, Ni, Cr, Pt, Ti, Pt, etc. The system has a planetary substrate holder which suitable for any sample size up to 4-inch diameter. The system has 6 pockets for e-beam sources and also has a Telemark Model 861 controller that allows for fully automated programming of multiple layers deposition.

ELECTRON BEAM (E-BEAM) EVAPORATOR FOR OXIDES

The ULTECH SEE-5S e-beam (oxides) system is a cryo-pump thin films evaporator with a 6 kW power supply, 6 pockets of e-beam sources. The e-beam system has 270° beam deflection and a new magnetic field design. This provides a much straighter beam path through the melt material, thus can increase the usable portion of the melt inventory and produces a more uniform and predictable evaporant cloud. This e-beam evaporation system is used to deposit single or multi layers of various oxides such as dielectrics, transparent conductive oxides (TCOs), etc. It is widely used to deposit SiO, TiO, ZnO, and ITO. During the deposition, oxygen gas can be flowed into the system to maintain the stoichiometry of the deposition layers. The system has a planetary substrate holder which suitable for any sample size up to 4-inch diameter. The system has 6 pockets for e-beam sources and also has a Telemark Model 861 controller that allows for fully automated programming of multiple layers deposition

DC/RF SPUTTERING SYSTEM

This equipment is a high-vacuum magnetron sputtering system designed for the deposition of advanced III-nitride thin films, including AlN, GaN, and InN, commonly used in semiconductor and optoelectronic applications. The system operates at a base pressure of 1 × 10⁻⁷ Torr, ensuring a clean and low-contamination environment for high-quality film growth. It is equipped with three magnetron sources powered by both RF and DC supplies, allowing flexibility in depositing different materials and enabling controlled incorporation of dopants such as silicon (Si) and magnesium (Mg). A silicon carbide (SiC) heater provides substrate heating up to 700 °C to enhance film crystallinity and adhesion. The sample holder includes a rotation mechanism to ensure uniform film thickness and composition across the substrate surface. A dedicated load-lock chamber is integrated to reduce exposure to ambient air, maintaining low impurity levels during sample transfer. The system also features automated pump-down and programmable recipe control, supporting both single-layer and multi-layer deposition processes with high repeatability. Argon (Ar) and nitrogen (N₂) gas supplies are used as sputtering and reactive gases. In addition, an in-situ thickness monitoring system is integrated to provide real-time feedback and precise control of film thickness during deposition.